Etching pits and dislocations in Si{111}

Share/Save/Bookmark

Nijdam, A.J. and Gardeniers, J.G.E. and Gui, C. and Elwenspoek, M. (2000) Etching pits and dislocations in Si{111}. Sensors and Actuators A: Physical, 86 (3). pp. 238-247. ISSN 0924-4247

[img] PDF
Restricted to UT campus only
: Request a copy
2MB
Abstract:The nature of etch pits that arise during anisotropic etching in KOH on Si{111} surfaces was investigated. It was verified that bulk stacking faults in the crystal lattice give rise to deep etching pits. Other types of dislocations, of which the nature is still unclear, were also found to be present, but these do not give rise to etching pits.
Item Type:Article
Copyright:© 2000 Elsevier Science B.V.
Faculty:
Science and Technology (TNW)
Electrical Engineering, Mathematics and Computer Science (EEMCS)
Research Group:
Link to this item:http://purl.utwente.nl/publications/14639
Official URL:http://dx.doi.org/10.1016/S0924-4247(00)00458-1
Export this item as:BibTeX
EndNote
HTML Citation
Reference Manager

 

Repository Staff Only: item control page

Metis ID: 111714