Etching methodologies in <111>-oriented silicon wafers

Oosterbroek, R.E. and Berenschot, J.W. and Jansen, H.V. and Nijdam, A.J. and Pandraud, G. and Berg van den, A. and Elwenspoek, M.C. (2000) Etching methodologies in <111>-oriented silicon wafers. Journal of Microelectromechanical Systems, 9 (3). pp. 390-396. ISSN 1057-7157

Preview

PDF
1367Kb

Abstract:	New methodologies in anisotropic wet-chemical etching of ¿111¿-oriented silicon, allowing useful process designs combined with smart mask-to-crystal-orientation-alignment are presented in this paper. The described methods yield smooth surfaces as well as high-quality plan-parallel beams and membranes. With a combination of pre-etching and wall passivation, structures can be etched at different depths in a wafer. Designs, using the ¿111¿-crystal orientation, supplemented with pictures of fabricated devices, demonstrate the potential of using ¿111¿-oriented wafers in microsystem design
Item Type:	Article
Copyright:	© 2000 IEEE
Faculty:	Electrical Engineering, Mathematics and Computer Science (EEMCS)
Research Group:	Transducers Science and Technology (TST) Biomedical and Environmental Sensor systems (BIOS)
Link to this item:	http://purl.utwente.nl/publications/14637
Official URL:	http://dx.doi.org/10.1109/84.870065
Export this item as:	BibTeX EndNote HTML Citation Reference Manager

Repository Staff Only: item control page

Metis ID: 111713