Etching methodologies in <111>-oriented silicon wafers


Oosterbroek, R.E. and Berenschot, J.W. and Jansen, H.V. and Nijdam, A.J. and Pandraud, G. and Berg, A. van den and Elwenspoek, M.C. (2000) Etching methodologies in <111>-oriented silicon wafers. Journal of Microelectromechanical Systems, 9 (3). pp. 390-396. ISSN 1057-7157

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Abstract:New methodologies in anisotropic wet-chemical etching of ¿111¿-oriented silicon, allowing useful process designs combined with smart mask-to-crystal-orientation-alignment are presented in this paper. The described methods yield smooth surfaces as well as high-quality plan-parallel beams and membranes. With a combination of pre-etching and wall passivation, structures can be etched at different depths in a wafer. Designs, using the ¿111¿-crystal orientation, supplemented with pictures of fabricated devices, demonstrate the potential of using ¿111¿-oriented wafers in microsystem design
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Copyright:© 2000 IEEE
Electrical Engineering, Mathematics and Computer Science (EEMCS)
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