Resistless patterning of sub-micron structures by evaporation through nanostencils


Brugger, J. and Berenschot, J.W. and Kuiper, S. and Nijdam, W. and Otter, B. and Elwenspoek, M. (2000) Resistless patterning of sub-micron structures by evaporation through nanostencils. Microelectronic Engineering, 53 (1). pp. 403-405. ISSN 0167-9317

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Abstract:We describe a sub-micron shadow-mask evaporation or nanostencil technique for single-layer material patterning. The technique does not involve photoresist processing steps and is therefore applicable on arbitrary surfaces. It allows for rapid fabrication of sub-micron structures on a milimeter scale. The nanostencils used here are thin microfabricated silicon nitride membranes, 1 × 3 mm wide and 0.3–1.0 μm thick. They are peforated by a regular two-dimensional array of sub-micron apertures of 1 μm periode. Metal evaporation of 40 nm thick Cr/Au through the apertures directly onto the substrate yields the exact 1:1 replication of the aperture pattern. The smallest dot size on a flat substrate obtained is 120 nm, whereas 750 nm dots are reproduced, both on free-standing micromechanical beams and on a surface recessed by 5–10 μm.
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Copyright:© 2000 Elsevier Science
Electrical Engineering, Mathematics and Computer Science (EEMCS)
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