Stationary hillocks on etching silicon

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Elwenspoek, M. (1999) Stationary hillocks on etching silicon. Journal of Micromechanics and Microengineering, 9 (2). pp. 180-185. ISSN 0960-1317

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Abstract:This paper aims at an explanation of the instability of etch fronts of single crystalline material. This instability manifests itself e.g. when langle001rangle oriented single crystalline silicon wafers are etched in aqueous KOH solutions by the formation of hillocks, and by the formation of terraces when etching different crystallographic orientations. The key for understanding is the observation that the faces of the hillocks are composed of stepped langle111rangle faces. The steps emerge from the edges of the pyramids. A comparison of the step speed and the rate of step formation naturally leads to a criterion for stability of the hillocks. We obtain good agreement with experimental data for silicon etched in KOH solutions.
Item Type:Article
Copyright:© Institute of Physics and IOP Publishing Limited 1999
Faculty:
Electrical Engineering, Mathematics and Computer Science (EEMCS)
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Link to this item:http://purl.utwente.nl/publications/14590
Official URL:http://dx.doi.org/10.1088/0960-1317/9/2/319
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