Velocity sources as an explanation for experimentally observed variations in Si ${111}$ etch rates

Nijdam, A.J. and Berenschot, J.W. and Suchtelen van, J. and Gardeniers, J.G.E. and Elwenspoek, M. (1999) Velocity sources as an explanation for experimentally observed variations in Si ${111}$ etch rates. Journal of Micromechanics and Microengineering, 9 (2). pp. 135-138. ISSN 0960-1317

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Abstract:	In anisotropic wet-chemical etching of silicon the etch rate ratio of <100> to <111> orientations is an important parameter that determines the reproducibility and accuracy of microstructures. Up to now, it is not understood why the values found in the literature of this parameter are inconsistent. We think that this can be explained by boundary features, that we have called velocity sources, locations where the etch rate is increased as a consequence of mechanical or kinetic boundary conditions.
Item Type:	Article
Copyright:	© Institute of Physics and IOP Publishing Limited 1999
Faculty:	Science and Technology (TNW) Electrical Engineering, Mathematics and Computer Science (EEMCS)
Research Group:	Mesoscale Chemical Systems (MCS) Transducers Science and Technology (TST)
Link to this item:	http://purl.utwente.nl/publications/14584
Official URL:	http://dx.doi.org/10.1088/0960-1317/9/2/008
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Velocity sources as an explanation for experimentally observed variations in Si etch rates