Intrinsic 1/f device noise reduction and its effect on phase noise in CMOS ring oscillators

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Gierkink, Sander L.J. and Klumperink, Eric A.M. and Wel van der, Arnoud P. and Hoogzaad, Gian and Tuijl van, Ed (A.J.M.) and Nauta, Bram (1999) Intrinsic 1/f device noise reduction and its effect on phase noise in CMOS ring oscillators. IEEE Journal of Solid-State Circuits, 34 (7). pp. 1022-1025. ISSN 0018-9200

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Abstract:This paper gives experimental proof of an intriguing physical effect: periodic on-off switching of MOS transistors in a CMOS ring oscillator reduces their intrinsic 1/f noise and hence the oscillator's close-in phase noise. More specifically, it is shown that the 1/f3 phase noise is dependent on the gate-source voltage of the MOS transistors in the off state. Measurement results, corrected for waveform-dependent upconversion and effective bias, show an 8-dB-lower 1/f3 phase noise than expected. It will be shown that this can be attributed to the intrinsic 1/f noise reduction effect due to periodic on-off switching
Item Type:Article
Copyright:©1999 IEEE
Faculty:
Electrical Engineering, Mathematics and Computer Science (EEMCS)
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Link to this item:http://purl.utwente.nl/publications/14534
Official URL:http://dx.doi.org/10.1109/4.772418
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Metis ID: 111659