Intrinsic 1/f device noise reduction and its effect on phase noise in CMOS ring oscillators

Gierkink, Sander L.J. and Klumperink, Eric A.M. and Wel van der, Arnoud P. and Hoogzaad, Gian and Tuijl van, Ed (A.J.M.) and Nauta, Bram (1999) Intrinsic 1/f device noise reduction and its effect on phase noise in CMOS ring oscillators. IEEE Journal of Solid-State Circuits, 34 (7). pp. 1022-1025. ISSN 0018-9200

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Abstract:	This paper gives experimental proof of an intriguing physical effect: periodic on-off switching of MOS transistors in a CMOS ring oscillator reduces their intrinsic 1/f noise and hence the oscillator's close-in phase noise. More specifically, it is shown that the 1/f3 phase noise is dependent on the gate-source voltage of the MOS transistors in the off state. Measurement results, corrected for waveform-dependent upconversion and effective bias, show an 8-dB-lower 1/f3 phase noise than expected. It will be shown that this can be attributed to the intrinsic 1/f noise reduction effect due to periodic on-off switching
Item Type:	Article
Copyright:	©1999 IEEE
Faculty:	Electrical Engineering, Mathematics and Computer Science (EEMCS)
Research Group:	Integrated Circuit Design (ICD)
Link to this item:	http://purl.utwente.nl/publications/14534
Official URL:	http://dx.doi.org/10.1109/4.772418
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