MOSFET 1/f noise measurement under switched bias conditions

Wel van der, A.P. and Klumperink, E.A.M. and Gierkink, S.L.J. and Wassenaar, R.F. and Wallinga, H. (2000) MOSFET 1/f noise measurement under switched bias conditions. IEEE Electron Device Letters, 21 (1). pp. 43-46. ISSN 0741-3106

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Abstract:	A new measurement setup is presented that allows the observation of 1/f noise spectra in MOSFET's under switched bias conditions in a wide frequency band (10 Hz-100 kHz). When switching between inversion and accumulation, MOSFET's of different manufacturers invariably show reduced 1/f noise power density for frequencies below the switching frequency. At low frequencies (10 Hz), a 5-8 dB reduction in intrinsic 1/f noise power density is found for different devices, largely independent of the switching frequency (up to 1 MHz). The switched bias measurements render detailed wideband 1/f noise spectra of switched MOSFET's, which is useful for 1/f noise model validation and analog circuit design
Item Type:	Article
Copyright:	©2000 IEEE
Faculty:	Electrical Engineering, Mathematics and Computer Science (EEMCS)
Research Group:	Integrated Circuit Design (ICD)
Link to this item:	http://purl.utwente.nl/publications/14532
Official URL:	http://dx.doi.org/10.1109/55.817447
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