Complementary vertical bipolar transistor process using high-energy ion implantation

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Ragay, F.W. and Aarnink, A.A.I. and Wallinga, H. (1991) Complementary vertical bipolar transistor process using high-energy ion implantation. Electronics Letters, 27 (23). pp. 2141-2143. ISSN 0013-5194

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Abstract:High-energy ion implantation is used as a key processing step in the formation of a complementary bipolar process with both transistor types being vertical. Both n-p-n and p -n-p transistors are made vertically with a deep implanted collector region. Combinations of epitaxial and buried layers are avoided. Both transistors have an ideal Gummel plot with a current gain of about 60. Cutoff frequencies of over 1 GHz have been measured, which is much higher than for conventional lateral p-n-p transistors
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Copyright:© 1991 IEEE
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Link to this item:http://purl.utwente.nl/publications/14489
Official URL:http://dx.doi.org/10.1049/el:19911326
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