Breakdown and Recovery of Thin Gate Oxides

Share/Save/Bookmark

Bearda, Twan and Mertens, Paul W. and Heyns, Marc M. and Wallinga, Hans and Woerlee, Pierre (2000) Breakdown and Recovery of Thin Gate Oxides. Japanese Journal of Applied Physics, Part 2: Letters, 39 (6b). L582-L584. ISSN 0021-4922

open access
[img]
Preview
PDF
76kB
Abstract:Breakdown events are studied in varying test set-ups with a high time resolution. Often a partial recovery from breakdown is observed within a few ms. Parameters such as device area, stress conditions and parasitic elements prohibit the recovery if they result in a high system impedance. The results suggest the existence of a highly conductive path that can be annihilated during breakdown
Item Type:Article
Copyright:© 2000 The Japan Society of Applied Physics
Research Group:
Link to this item:http://purl.utwente.nl/publications/14476
Official URL:http://dx.doi.org/10.1143/JJAP.39.L582
Export this item as:BibTeX
EndNote
HTML Citation
Reference Manager

 

Repository Staff Only: item control page

Metis ID: 111625