Breakdown and recovery of thin gate oxides


Bearda, Twan and Mertens, Paul W. and Heyns, Marc M. and Wallinga, Hans and Woerlee, Pierre (2000) Breakdown and recovery of thin gate oxides. Japanese journal of applied physics, Part 2: Letters, 39 (6B). L582-L584. ISSN 0021-4922

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Abstract:Breakdown events are studied in varying test set-ups with a high time resolution. Often a partial recovery from breakdown is observed within a few ms. Parameters such as device area, stress conditions and parasitic elements prohibit the recovery if they result in a high system impedance. The results suggest the existence of a highly conductive path that can be annihilated during breakdown.
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Copyright:© 2000 The Japan Society of Applied Physics
Electrical Engineering, Mathematics and Computer Science (EEMCS)
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Metis ID: 111625