Growth of ZnO thin films on GaAs by pulsed laser deposition

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Craciun, V. and Elders, J. and Gardeniers, J.G.E. and Geretovsky, J. and Boyd, Ian W. (1995) Growth of ZnO thin films on GaAs by pulsed laser deposition. Thin Solid Films, 259 (1). pp. 1-4. ISSN 0040-6090

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Abstract:ZnO thin films have been grown on GaAs substrates using the pulsed laser deposition technique with or without a photodeposited SiO2 buffer layer. The presence of the SiO2 layer has a beneficial effect on the crystalline quality of the grown ZnO films. Highly c-axis oriented ZnO films having a full width at half maximum value of the (002) X-ray diffraction line of less than 0.13 ° have been grown on such buffer layers at a substrate temperature of only 350 °C.
Item Type:Article
Copyright:© 1995 Elsevier Science
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Science and Technology (TNW)
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Link to this item:http://purl.utwente.nl/publications/14382
Official URL:http://dx.doi.org/10.1016/0040-6090(94)09479-9
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