Low temperature glass bonding for sensor applications using boron oxide thin films


Legtenberg, Rob and Bouwstra, Siebe and Elwenspoek, Miko (1991) Low temperature glass bonding for sensor applications using boron oxide thin films. Journal of Micromechanics and Microengineering, 1 (3). pp. 157-160. ISSN 0960-1317

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Abstract:Low-temperature glass bonding of silicon, silicon dioxide and silicon nitride is described. Boron oxide was used as the intermediate glass layer at a bonding temperature of 450 degrees C. First experiments indicate that due to reflow and deformation of the molten glass layer bonding over metal patterns is possible, e.g. aluminium or chromium/gold. No voids are observed by examination of cleaved cross sections using optical microscopy or by IR transmission of bonded wafers. Scanning acoustic tomography, however, revealed regions of good, as well as regions of bad bonding quality. Bonding at low temperatures, with less critical demands for surface flatness, and the possibility of metalized electrical feedthrough will offer more process flexibility in the fabrication of sensors and actuators.
Item Type:Article
Copyright:© 1991 Institute of Physics
Electrical Engineering, Mathematics and Computer Science (EEMCS)
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Link to this item:http://purl.utwente.nl/publications/14370
Official URL:https://doi.org/10.1088/0960-1317/1/3/005
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