Direct measurement of piezoelectric properties of Sol-Gel PZT films


Gardeniers, J.G.E. and Verholen, A.G.B.J. and Tas, N.R. and Elwenspoek, M.C. (1998) Direct measurement of piezoelectric properties of Sol-Gel PZT films. Journal of the Korean Physical Society (32). S1573-S1577. ISSN 0374-4884

Full text not available from this repository. The author is invited to upload the full text of this publication.

Abstract:PbZr0.53Ti0.47O3 films were deposited on Si-SiO2-Ta-Pt substrates via a conventional sol-gel procedure. Electrical properties of the films were: resistivity ca. 5 × 1011 Ωcm, relative dielectric permittivity 900-1100, remnant polarization ca. 20 μC/cm2, breakdown electric field larger than 50 MV/m. The deflection amplitude of piezoelectrically excited Si cantilevers, covered with SiO2-Ta-Pt-PZT-Al, was determined with the aid of a heterodyne Mach-Zehnder interferometer. The piezoelectric strain constant d31 of the PZT films was determined from the amplitude measured at frequencies far below the first mechanical resonance (quasi-static method). The d31 constant was also determined from the deflection amplitude at the first mechanical resonance and the quality factor of the cantilever. Measured values ranged from -30 pC/N for unpoled films to -160 pC/N for films poled at room temperature and 40 MV/m.
Item Type:Article
Copyright:© 1998 Korean Physical Society
Science and Technology (TNW)
Electrical Engineering, Mathematics and Computer Science (EEMCS)
Research Group:
Link to this item:
Export this item as:BibTeX
HTML Citation
Reference Manager


Repository Staff Only: item control page

Metis ID: 111517