Digital computation and in situ STM approach of silicon anistropic etching

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Kasparian, Jerome and Elwenspoek, M. and Allongue, Philippe (1997) Digital computation and in situ STM approach of silicon anistropic etching. Surface Science, 388 (1-3). pp. 50-62. ISSN 0039-6028

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Abstract:Si anisotropic etching is simulated on the atomic level with a simple algorithm (Monte Carlo method). The comparison of simulated sequences with in situ real-time STM observations of n-Si(111) in NaOH demonstrates the relevance of the model. Analytical expressions for the growth of triangular etch pits are given and a method proposed to determine experimentally the reaction rates on the atomic scale. The bias dependence of reaction rates and the mechanism of nucleation of etch pits are also discussed in the framework of the chemical description of Si etching.
Item Type:Article
Copyright:© 1997 Elsevier Science
Faculty:
Electrical Engineering, Mathematics and Computer Science (EEMCS)
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Link to this item:http://purl.utwente.nl/publications/14232
Official URL:http://dx.doi.org/10.1016/S0039-6028(97)00356-7
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