The form of etch rate minima in wet chemical anisotropic etching of silicon

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Elwenspoek, M. (1996) The form of etch rate minima in wet chemical anisotropic etching of silicon. Journal of Micromechanics and Microengineering, 6 (4). pp. 405-409. ISSN 0960-1317

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Abstract:Etching of monocrystalline silicon in alkaline based solutions leads to a deep minimum in the etch rate crystallographically oriented along (111). The details of the form of the minimum (angular dependence of the etch rate) are investigated and discussed in a framework of steps originating from spontaneous nucleation and from misorientation of the crystal face exposed to the etchant. As a result, the etch rate minimum is characterized by a narrow flat portion that reflects the density of nuclei, and the temperature dependence of the width has an activation energy equal to 1/3 of the nucleation barrier.
Item Type:Article
Copyright:© 1996 IOP Science
Faculty:
Electrical Engineering, Mathematics and Computer Science (EEMCS)
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Link to this item:http://purl.utwente.nl/publications/14219
Official URL:http://dx.doi.org/10.1088/0960-1317/6/4/007
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Metis ID: 111496