The form of etch rate minima in wet chemical anisotropic etching of silicon

Elwenspoek, M. (1996) The form of etch rate minima in wet chemical anisotropic etching of silicon. Journal of Micromechanics and Microengineering, 6 (4). pp. 405-409. ISSN 0960-1317

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Abstract:	Etching of monocrystalline silicon in alkaline based solutions leads to a deep minimum in the etch rate crystallographically oriented along (111). The details of the form of the minimum (angular dependence of the etch rate) are investigated and discussed in a framework of steps originating from spontaneous nucleation and from misorientation of the crystal face exposed to the etchant. As a result, the etch rate minimum is characterized by a narrow flat portion that reflects the density of nuclei, and the temperature dependence of the width has an activation energy equal to 1/3 of the nucleation barrier.
Item Type:	Article
Copyright:	© 1996 IOP Science
Faculty:	Electrical Engineering, Mathematics and Computer Science (EEMCS)
Research Group:	Transducers Science and Technology (TST)
Link to this item:	http://purl.utwente.nl/publications/14219
Official URL:	http://dx.doi.org/10.1088/0960-1317/6/4/007
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