Fusion bonding of rough surfaces with polishing technique for silicon micromaching

Share/Save/Bookmark

Gui, C. and Albers, H. and Gardeniers, J.G.E. and Elwenspoek, M. and Lambeck, P.V. (1997) Fusion bonding of rough surfaces with polishing technique for silicon micromaching. Microsystem Technologies, 3 (3). pp. 122-128. ISSN 0946-7076

[img]
Preview
PDF
2426Kb
Abstract:Abstract Surface roughness is one of the crucial factors in silicon fusion bonding. Due to the enhanced surface roughness, it is almost impossible to bond wafers after KOH etching. This also applies when wafers are heavily doped, have a thick LPCVD silicon nitride layer on top or have a LPCVD polysilicon layer of poor quality. It has been demonstrated that these wafers bond spontaneously after a very brief chemical mechanical polishing step. An adhesion parameter, that comprises of both the mechanical and chemical properties of the surface, is introduced when discussing the influence of surface roughness on the bondability. Fusion bonding, combined with a polishing technique, will broaden the applications of bonding techniques in silicon micromachining.
Item Type:Article
Copyright:© Springer 1997
Faculty:
Science and Technology (TNW)
Electrical Engineering, Mathematics and Computer Science (EEMCS)
Research Group:
Link to this item:http://purl.utwente.nl/publications/14207
Official URL:http://dx.doi.org/10.1007/s005420050068
Export this item as:BibTeX
EndNote
HTML Citation
Reference Manager

 

Repository Staff Only: item control page

Metis ID: 111490