Gate Oxide Reliability of Poly-Si and Poly-SiGe CMOS Devices


Houtsma, Vincent Etienne (2000) Gate Oxide Reliability of Poly-Si and Poly-SiGe CMOS Devices. thesis.

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Abstract:This thesis focuses on the gate oxide reliability of poly silicon (poly-Si) and poly Silicon-Germanium(poly-Si0:7Ge0:3) dual gate CMOS devices. The conduction mechanism (I-V), Stress-Induced Leakage Current (SILC) and time-tobreakdown (tbd) of these devices on (ultra-)thin gate oxides is studied. P+ and n+-gates with poly-Si and poly-SiGe are used to study the in uence of gate workfunction
on gate current and SILC current. Poly-SiGe is chosen since its allows modification of the workfunction of the gate for p+-poly gate devices. Moreover, it is fully compatible with (poly-)Si technology.
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Metis ID: 111449