Chemically modified field effect transistors with nitrite or fluoride selectivity

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Antonisse, Martijn M.G. and Snellink-Ruel, Bianca H.M. and Engbersen, Johan F.J. and Reinhoudt, David N. (1998) Chemically modified field effect transistors with nitrite or fluoride selectivity. Journal of the Chemical Society. Perkin transactions II, 1998 (4). pp. 773-777. ISSN 0300-9580

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Abstract:Polysiloxanes with different types of polar substituents are excellent membrane materials for nitrite and fluoride selective chemically modified field effect transistors (CHEMFETs). Nitrite selectivity has been introduced by incorporation of a cobalt porphyrin into the membrane; fluoride selectivity has been obtained with a uranyl salophen derivative as the anion receptor. Polysiloxanes with acetylphenoxypropyl or phenylsulfonylpropyl substituents are the best sensing membranes. The nitrite selective CHEMFETs exhibit Nernstian responses and a high selectivity over chloride and bromide (log KPotNO2,j = –2.9 and –2.7 respectively, based on a phenylsulfonylpropyl functionalized polysiloxane). Also the sensitivity and selectivity of the fluoride selective CHEMFETs is better with the polysiloxane membranes than with plasticized PVC membranes. Even in the presence of 0.1 M of the more lipophilic chloride, bromide, or nitrate ions an almost Nernstian response and a detection limit of 0.25 mM is obtained for fluoride (log KF,jPot = –2.5).
Item Type:Article
Copyright:© Royal Society of Chemistry 1998
Faculty:
Science and Technology (TNW)
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Link to this item:http://purl.utwente.nl/publications/11102
Official URL:http://dx.doi.org/10.1039/a709076e
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Metis ID: 105995